Laser annealing apparatus
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United States of America Patent
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Aug 29, 2006
Grant Date -
May 27, 2004
app pub date -
Nov 27, 2002
filing date -
Nov 27, 2002
priority date (Note) -
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Abstract
A laser annealing apparatus for crystallizing a semiconductor film with a linearly radiating laser beam including a laser oscillator and laser optical systems for forming a laser beam radiated from the laser oscillator linearly, for application to a semiconductor film. Each linearly radiating laser beam from each laser optical system radiated onto the semiconductor film is arrayed almost linearly in a length direction, with an interval on the semiconductor film.
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