Group III-V compound semiconductor and method of producing the same
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United States of America Patent
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Jan 7, 2003
Grant Date -
Oct 18, 2001
app pub date -
Mar 23, 2001
filing date -
Mar 24, 2000
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Abstract
Provided is a method of producing a group III-V compound semiconductor having a low dislocation density without increasing the thickness of a re-grown layer, the method includes a re-growing process using a mask pattern, and threading dislocations in the re-grown layer are terminated by the voids formed on the pattern.
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