MOS-type semiconductor device and method for making same
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United States of America Patent
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Nov 5, 2002
Grant Date -
Oct 18, 2001
app pub date -
Dec 7, 2000
filing date -
Dec 28, 1999
priority date (Note) -
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Abstract
An MOS-type semiconductor device comprises two semiconductors separated by an insulator. The two semiconductors comprise monocrystal semiconductors, each having a crystallographic orientation with respect to the insulator (or other crystallographic/semiconductor property) different to the crystallographic orientation (or other respective property) of the other semiconductor. This arrangement of crystallographic orientations (and other crystallographic/semiconductor properties) can yield reduced unintended electron tunneling or current leakage through the insulator vis a vis a semiconductor device in which such an arrangement is not used. Methods for forming the MOS-type semiconductor devices of the invention are also provided.
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