Semiconductor device
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United States of America Patent
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Jun 1, 2010
Grant Date -
Jun 28, 2007
app pub date -
Dec 26, 2006
filing date -
Dec 28, 2005
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Embodiments relate to a semiconductor device. In embodiments, a semiconductor device may include a semiconductor substrate having isolation layers and a well region, a gate electrode formed within a trench having a predetermined depth in the well region, source/drain regions formed at both sides of the trench, respectively, an interlayer dielectric layer formed on the semiconductor substrate to have predetermined contact holes, and metal interconnections formed within the contact holes, respectively.
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