High-frequency semiconductor device
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United States of America Patent
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Apr 18, 2006
Issued Date -
N/A
app pub date -
Mar 19, 2004
filing date -
May 11, 2001
priority date (Note) -
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status (Latency Note)
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Abstract
There is provided a high-frequency GaAs power FET element with high performance, capable of suppressing an abnormal oscillation. Thin film resistors are provided so as to be connected electrically between incoming distributed constant lines connected electrically to FET chips, and thin film resistors are provided so as to be connected electrically between outgoing distributed constant lines electrically connected to FET chips. An unnecessary roundabout power is consumed by the thin film transistors in the incoming distributed constant lines and the outgoing distributed constant lines.
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