HDPCVD process and method for improving uniformity of film thickness
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 26, 2007
Grant Date -
Mar 23, 2006
app pub date -
Sep 23, 2004
filing date -
Sep 23, 2004
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A high density plasma chemical vapor deposition (HDPCVD) process is disclosed. First, a first deposition step is performed on a wafer. Then, the wafer is rotated with an angle. A second deposition step is performed for completing the deposition. By the rotation of the wafer, the thin film is formed with a desired uniformity.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully