Semiconductor devices and methods for fabricating the same
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United States of America Patent
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Feb 27, 2007
Grant Date -
Jun 30, 2005
app pub date -
Dec 29, 2004
filing date -
Dec 30, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Semiconductor devices and methods for fabricating the same are disclosed. A disclosed method includes forming a trench in a region where a main gate pattern is to be formed, forming an insulating film having a fixed thickness in the trench, and fixing a scale of the main gate pattern filled in the trench with the thickness of the insulating film. The trench elongates a current flow passage formed by a shape of the main gate pattern.
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