Method for anodizing silicon substrates for surface type acceleration sensors
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 9, 2003
Grant Date -
N/A
app pub date -
Dec 2, 1999
filing date -
Jun 5, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An epitaxial growth layer, an oxide film, and a passivation film are formed on a silicon substrate. Except for an opening formed on a part of the passivation film, the upper surface of the passivation film is covered with a metal protective film made of tungsten (W). With the silicon substrate immersed in a high-concentration hydrofluoric aqueous solution, anodization is performed with the silicon substrate as an anode and the metal protective film as a counter electrode.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully