Semiconductor device including insulation film with plurality of opening portions and manufacturing method for semiconductor device
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United States of America Patent
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Aug 30, 2022
Grant Date -
Sep 17, 2020
app pub date -
Dec 3, 2019
filing date -
Mar 12, 2019
priority date (Note) -
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status (Latency Note)
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Abstract
An insulation film includes a first opening portion in at least one of a cell region and a termination region, and a second opening portion in an interface region. The second opening portion has an opening ratio lower than an opening ratio of the first opening portion. The semiconductor device includes a first impurity layer of a second conductivity type, and a second impurity layer of the second conductivity type. The first impurity layer is disposed on a surface of a semiconductor substrate below the first opening portion. The second impurity layer has impurity concentration lower than impurity concentration of the first impurity layer, and is disposed on the surface of the semiconductor substrate below the second opening portion.
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