Diamond type quad-resistor cells of PRAM

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8680504
APP PUB NO 20120223287A1
SERIAL NO

13471805

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Abstract

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A method of forming a phase-change random access memory (PRAM) cell, and a structure of a phase-change random access memory (PRAM) cell are disclosed. The PRAM cell includes a bottom electrode, a heater resistor coupled to the bottom electrode, a phase change material (PCM) thrilled over and coupled to the heater resistor, and a top electrode coupled to the phase change material. The phase change material contacts a portion of a vertical surface of the heater resistor and a portion of a horizontal surface of the heater resistor to form an active region between the heater resistor and the phase change material.

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Patent Owner(s)

  • QUALCOMM INCORPORATED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Xia San Diego, US 414 4141

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