Split-gate memory device and method of forming same

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United States of America Patent

PATENT NO 11728438
APP PUB NO 20220310845A1
SERIAL NO

17236493

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Abstract

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A substrate in a split-gate memory device has a memory cell region including a connecting subregion and a functional subregion. A source region is formed in the substrate, and first and second gate structures mirrored to each other are formed on the substrate on opposing sides of the source region. In the connecting subregion, control gates of the first and second gate structures and the source region are electrically connected by electrical connections. In the split-gate memory device, the arrangement of the functional and connecting subregions in the memory cell region and external connection of the control gates in the first and second gate structures and the source region in the connecting subregion, which are exposed by etching, by the electrical connections in the connecting subregion result in area savings of the memory cell region.

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Patent Owner(s)

  • SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Li, Binghan Shanghai, CN 10 16
Yu, Tao Shanghai, CN 249 2030

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