Method of forming lateral trench MOSFET with direct trench polysilicon contact
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United States of America Patent
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Jul 20, 2010
Grant Date -
Aug 27, 2009
app pub date -
Apr 29, 2009
filing date -
Aug 28, 2006
priority date (Note) -
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Abstract
A lateral trench MOSFET includes a trench containing a device segment and a gate bus segment. The gate bus segment of the trench is contacted by a conductive plug formed in a dielectric layer overlying the substrate, thereby avoiding the need for the conventional surface polysilicon bridge layer. The conductive plug is formed in a substantially vertical hole in the dielectric layer. The gate bus segment may be wider than the device segment of the trench. A method includes forming a shallow trench isolation (STI) while the conductive material in the trench is etched.
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