Semiconductor devices and methods for fabricating thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11244946
APP PUB NO 20210125996A1
SERIAL NO

16946487

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Semiconductor device may include a landing pad and a lower electrode that is on and is connected to the landing pad and includes an outer portion and an inner portion inside the outer portion. The outer portion includes first and second regions. The semiconductor devices may also include a dielectric film on the first region of the outer portion on the lower electrode and an upper electrode on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, the dielectric film does not extend along the second region of the outer portion. A concentration of the silicon dopant in the first region of the outer portion is different from a concentration of the silicon dopant in the second region of the outer portion and is higher than a concentration of the silicon dopant in the inner portion.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahn, Se Hyoung Seoul, KR 9 13
An, Chang Mu Osan-si, KR 8 8
Kang, Sang Yeol Yongin-si, KR 12 12
Park, Young-Lim Anyang-si, KR 52 663
Seo, Jong-Bom Seoul, KR 17 70

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