Method of making aluminum alloy film by implanting silicon ions followed by thermal diffusion
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United States of America Patent
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-
Nov 13, 1984
Grant Date -
N/A
app pub date -
Sep 8, 1982
filing date -
Oct 6, 1981
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Aluminum metallization layers on a semiconductor substrate are alloyed with a predetermined quantity of silicon by implanting silicon ions into the metallization layer. The layer is heated during subsequent processing to a temperature of 300.degree. to 500.degree. C. at which simultaneous annealing and diffusion take place to form the alloy. An apparatus for performing the process comprises a vacuum chamber wherein implantation is effected, an ion gun and means including a deflection magnet slit for selecting a single ionic species for implantation.
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