Dual band photodiode element and method of making the same

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United States of America Patent

PATENT NO 11764325
APP PUB NO 20230018071A1
SERIAL NO

17935600

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Abstract

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Mercury cadmium telluride (MCT) dual band photodiode elements are described that include an n-type barrier region interposed between first and second p-type regions. The first p-type region is arranged to absorb different IR wavelengths to the second p-type region in order that the photodiode element can sense two IR bands. A portion of the second p-type region is type converted using ion-beam milling to produce a n-type region that interfaces with the second p-type region and the n-type barrier region.

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Patent Owner(s)

  • LEONARDO UK LTD

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bains, Sudesh Essex, GB 4 4
Hipwood, Les Essex, GB 2 1

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