Polycrystalline silicon contact structure
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United States of America Patent
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-
Sep 29, 1992
Grant Date -
N/A
app pub date -
Apr 30, 1990
filing date -
Apr 30, 1990
priority date (Note) -
Reissued
status (Latency Note)
Importance
Abstract
A contact structure provides electrical contact between two polycrystalline silicon interconnect layers. The lower layer has a silicide layer on its upper surface. The upper polycrystalline silicon layer can be doped with a different conductivity type, and makes an ohmic contact with the silicided region of the lower polycrystalline silicon layer.
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