Etch-resistant film, forming method thereof, surface-modified resist pattern, forming method thereof, semiconductor device and manufacturing method thereof
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United States of America Patent
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Nov 25, 2008
Grant Date -
Dec 8, 2005
app pub date -
Aug 18, 2005
filing date -
Feb 28, 2003
priority date (Note) -
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Abstract
The present invention provides a surface-modified resist pattern which contains a resist pattern having low etch resistance by itself but having a modified and etch-resistant surface and is suitable for fine and high-definition patterning, and a method for efficiently forming the same. The method forms a surface-modified resist pattern having an etch-resistant surface by selectively depositing an organic compound on a resist pattern. The deposition is preferably carried out by using plasma of a gas. The method preferably includes arranging the organic compound so as to face the resist pattern, the organic compound having been deposited on a base material, and depositing the organic compound onto the resist pattern. The plasma of the gas is preferably introduced from an opposite side of the base material to the organic compound deposited thereon.
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