Importance

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Abstract

A hall effect element of the type having a semi-insulating substrate of a single crystal of a compound semiconductor such as GaAs and an either n-type or p-type conducting layer which is formed on a surface given by a (1 0 0) plane of the single crystal and selectively removed by etching together with a surface region of the substrate to provide a Hall-pattern. As the improvement, the direction of current inflow in the Hall-pattern is made to coincide with either the [1 1 0] direction or the [1 1 0] direction in the (1 0 0) plane, whereby the Hall element becomes very small in the magnitude of unbalanced voltage despite a relatively high Hall voltage.

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First Claim