Bipolar junction transistor with constricted collector region having high gain and early voltage product
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United States of America Patent
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Feb 21, 2023
Grant Date -
N/A
app pub date -
Dec 2, 2021
filing date -
Feb 4, 2020
priority date (Note) -
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Abstract
A semiconductor device includes a bipolar junction transistor having a collector, a base, and an emitter. The collector includes a current collection region, a constriction region laterally adjacent to the current collection region, and a contact region laterally adjacent to the constriction region, located opposite from the current collection region. The current collection region, the constriction region laterally, and the contact region all have the same conductivity type. The base includes a current transmission region contacting the current collection region and a constricting well laterally adjacent to, and contacting, the current transmission region and contacting the constriction region. The current transmission region and the constricting well have an opposite conductivity type than the current collection region, the constriction region laterally, and the contact region.
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