Non-volatile perpendicular magnetic memory with low switching current and high thermal stability
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United States of America Patent
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Jul 23, 2013
Grant Date -
Aug 23, 2012
app pub date -
Apr 23, 2012
filing date -
Feb 12, 2007
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Abstract
A non-volatile current-switching magnetic memory element includes a bottom electrode, a pinning layer formed on top of the bottom electrode, and a fixed layer formed on top of the pinning layer. The non-volatile current-switching magnetic memory element further includes a tunnel layer formed on top of the pinning layer, a first free layer with a perpendicular anisotropy that is formed on top of the tunnel layer, a granular film layer formed on top of the free layer, a second free layer formed on top of the granular film layer, a cap layer formed on top of the second layer, and a top electrode formed on top of the cap layer.
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