Field effect transistors with negative capacitance layers

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United States of America Patent

PATENT NO 11437371
SERIAL NO

16925718

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Abstract

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The present disclosure describes a method includes forming a fin structure including a fin base portion and a stacked fin portion on a substrate. The stacked fin portion includes a first semiconductor layer on the fin base portion, a second semiconductor layer above the first semiconductor layer, and a sacrificial semiconductor layer between the first and second semiconductor layers. The method further includes replacing the sacrificial semiconductor layer with a negative capacitance (NC) layer and forming gate electrodes around the NC layer, the first semiconductor layer, and the second semiconductor layer. The NC layer includes an NC dielectric material.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Keh-Jeng Hsinchu, TW 47 709
Yang, Chan-Lon Taipei, TW 139 2266
Yang, Chansyun David Shinchu, TW 47 69

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