Importance

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Abstract

A mask pattern correcting method is comprised of a before-correction pattern edge defining step for defining an edge of a mask pattern, a deviated position setting step for setting a close point and a isolated point based on the deviation between the pattern edges of the mask pattern and the design pattern, an edge selecting step for correcting an edge located within specified distance from the isolated point, and selecting a mask pattern edge that will have smaller variation of the close point light intensity and larger variation of isolated point light intensity by the correction, a correcting step for correcting an edge to be corrected such that the isolated point light intensity after correction satisfies a criterion for correction, an after-correction pattern edge defining step for defining a pattern edge of the corrected mask pattern, and an end determining step for ending correction when the deviation between the defined after-correction pattern edge and the edge of the design pattern is within a specified criteria for determining ending correction.

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First Claim