Electro-thermal method to manufacture monocrystalline vertically oriented silicon channels for three-dimensional (3D) NAND memories
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 6, 2022
Grant Date -
Aug 12, 2021
app pub date -
Dec 31, 2020
filing date -
Jan 3, 2020
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A method of forming a multitude of vertical NAND memory cells, includes, in part, forming a multitude of insulating materials on a silicon substrate, forming a trench in the insulating materials to expose a surface of the silicon substrate, depositing a layer of polysilicon along the sidewalls of the trench, filling the trench with oxide, forming a metal layer above the trench, and forming a mono-crystalline channel for the NAND memory cells by applying a voltage between the silicon substrate and the metal layer to cause the polysilicon sidewalls to melt. The melted polysilicon sidewalls is enable to recrystallize into the mono-crystalline channel.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully