Semiconductor structure and fabrication method thereof

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11417738
APP PUB NO 20210066462A1
SERIAL NO

17004937

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Abstract

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Semiconductor structures and fabrication methods thereof are provided. The method includes: providing a substrate, the substate having a first opening; forming a first epitaxial layer in the first opening, the first epitaxial layer having a second opening; forming a stop layer on sidewall surfaces and a bottom surface of the second opening; forming a second epitaxial layer on a top surface of the stop layer; after forming the second epitaxial layer, forming a dielectric layer on the substrate, the dielectric layer having a third opening exposing a surface of the second epitaxial layer; forming a fourth opening in the second epitaxial layer by etching the second epitaxial layer exposed by the third opening until the stop layer is exposed; and forming a contact layer on sidewall surfaces and a bottom surface of the fourth opening by performing a semiconductor metallization process.

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Patent Owner(s)

  • SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION; SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Zhang, Qingchun Shanghai, CN 98 1733

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