Selective and non-selective epitaxy for base intergration in a BiCMOS process
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 14, 2010
Issued Date -
N/A
app pub date -
Nov 5, 2008
filing date -
Jun 6, 2005
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
According to one exemplary embodiment, a bipolar transistor includes an active area situated between first and second isolation regions in a substrate. The bipolar transistor further includes an epitaxial extension layer situated on the active area, where the epitaxial extension layer extends over the first and second isolation regions. The bipolar transistor further includes a base layer situated on the epitaxial extension layer, where the base layer includes an epitaxial base, and where the epitaxial base includes a usable emitter formation area. The active area has a first width and the usable emitter formation area has a second width, where the second width is at least as large as the first width.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully