Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

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United States of America Patent

PATENT NO 8803126
APP PUB NO 20130334494A1
SERIAL NO

13973615

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Abstract

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A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode.

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Patent Owner(s)

  • SONY SEMICONDUCTOR SOLUTIONS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Toda, Atsushi Kanagawa, JP 211 2626

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