Method for manufacturing semiconductor devices
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United States of America Patent
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Aug 5, 2003
Grant Date -
Nov 8, 2001
app pub date -
Apr 17, 2001
filing date -
Apr 17, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A disclosed method for manufacturing semiconductor devices includes the steps of: implanting an ion in a region in which a medium thickness gate oxide film is to be formed, under such conditions that a range of fluorine may measure 15-150 nm in a P-type silicon substrate; removing a chemical oxide film on the surface or the region; and forming by oxidation processing the gate oxide film with the medium film thickness in the region.
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