Semiconductor device structure with metal gate stack

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United States of America Patent

PATENT NO 11769819
SERIAL NO

17135339

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Abstract

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A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a metal gate stack over the semiconductor substrate. The semiconductor device structure also includes a spacer element over a sidewall of the metal gate stack. The spacer element is doped with a dopant, and the dopant reduces a dielectric constant of the spacer element. An atomic concentration of the dopant decreases along a direction from an inner surface of the spacer element adjacent to the metal gate stack towards an outer surface of the spacer element.

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Patent Owner(s)

  • TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liu, Chang-Miao Hsinchu, TW 68 86
Shang, Huiling Hsinchu County, TW 47 1149
Wu, Xusheng Hsinchu, TW 135 793

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