Semiconductor device including junction diode contacting contact-antifuse unit comprising silicide
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United States of America Patent
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Sep 20, 2005
Grant Date -
Jun 9, 2005
app pub date -
Dec 3, 2003
filing date -
Dec 3, 2003
priority date (Note) -
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Abstract
The invention provides for a vertically oriented junction diode having a contact-antifuse unit in contact with one of its electrodes. The contact-antifuse unit is formed either above or below the junction diode, and comprises a silicide with a dielectric antifuse layer formed on and in contact with it. In preferred embodiments, the silicide is cobalt silicide, and the antifuse preferably silicon oxide, silicon nitride, or silicon oxynitride grown on the colbalt silicide. The junction diode and contact-antifuse unit can be used as a memory cell, which is advantageously used in a monolithic three dimensional memory array.
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