DRAM technology compatible processor/memory chips

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6924194
APP PUB NO 20020176293A1
SERIAL NO

10191330

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention includes a programmable logic array having a first logic plane that receives a number of input signals. The first logic plane has a plurality of non-volatile memory cells arranged in rows and columns that are interconnected to provide a number of logical outputs. A number of non-volatile memory cells arranged in rows and columns of a second logic plane receive the outputs of the first logic plane and are interconnected to produce a number of logical outputs such that the programmable logic array implements a logical function. Each non-volatile memory cell includes a MOSFET. Each non-volatile memory cell includes a stacked capacitor formed according to a DRAM process. Each non-volatile memory cell includes an electrical contact that couples the stacked capacitor to a gate of the MOSFET. The present invention also includes methods for producing the Ics and arrays.

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Patent Owner(s)

  • ROUND ROCK RESEARCH, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cloud, Eugene H Boise, ID 92 3533
Forbes, Leonard Corvallis, OR 1219 61459
Noble, Wendell P Milton, VT 167 8660

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