Crystal pulling apparatus for making single crystals of compound semiconductors containing a volatile component

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United States of America Patent

PATENT NO 4569828
SERIAL NO

06675404

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In a high pressure vessel such as an electric furnace using an inert gas of an extremely high pressure as an atmosphere for preventing the evaporation of arsenic or phosphorus when pulling a single crystal of a compound semiconductor having a high melting point and exhibiting a high dissociation pressure at the melting point, such as a III-V Group compound semiconductor, e.g. GaAs or GaP from a feed melt contained in a crucible, it is intended to rotate and vertically move a crucible supporting shaft and a single crystal pulling shaft smoothly without impairing at all the gas-tightness in the furnace, the drive means utilizing a magnetic force for performing such rotational and vertical movements. In order to mount rotating and vertically moving mechanisms of the moving shafts in an extremely limited space of the vessel to permit easy assembly and disassembly, there are provided plural cylinders enclosing these mechanisms, each consisting of axially removably connected tubular bodies of a thin-walled small diameter. The above rotating and vertically moving mechanisms are incorporated in the interior of those cylinders. Additionally, a weight measuring means is provided. All parts are in a hermetically sealed state.

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Patent Owner(s)

  • GAKEI ELECTRIC WORKS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nishizawa, Minoru Tokyo, JP 38 595

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