Semiconductor element
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
May 19, 2015
Grant Date -
Apr 2, 2015
app pub date -
May 13, 2014
filing date -
Oct 2, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor element includes a collector contact layer of a high concentration N-type semiconductor layer. An N-type collector layer, a base layer, being a high concentration P-type semiconductor layer with a top surface, laminated on the collector layer, and an N-type emitter layer laminated on a part of the top surface, are laminated on the collector contact layer. A base-collector layer junction is located on a bonded surface, between the base layer and the collector layer. An inactive portion is located outside an outside end of a base electrode on the top surface, in a plan view. The inactive portion is formed by implanting ions of one of helium and argon into the first and second semiconductor layers. The inactive portion extends from the top surface to a position below the base-collector layer junction.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully