Method of forming high-luminescence silicon electroluminescence device
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United States of America Patent
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Aug 21, 2007
Grant Date -
Aug 24, 2006
app pub date -
Feb 24, 2005
filing date -
Feb 24, 2005
priority date (Note) -
Expired
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Abstract
A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of 1.5 to 2.1, and a porosity in the range of 5 to 20%; and, post-annealing the SRO film in an oxygen atmosphere. DC-sputtering or PECVD processes can be used to deposit the SRO film. In one aspect the method further comprises: HF buffered oxide etching (BOE) the SRO film; and, re-oxidizing the SRO film, to form a SiO.sub.2 layer around the Si nanocrystals in the SRO film. In one aspect, the SRO film is re-oxidized by annealing in an oxygen atmosphere. In this manner, a layer of SiO.sub.2 is formed around the Si nanocrystals having a thickness in the range of 1 to 5 nanometers (nm).
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