Method of depositing tungsten nitride using a source gas comprising silicon

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May 4, 2004
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Dec 5, 2001
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Nov 30, 1994

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Abstract

A method for depositing tungsten nitride uses a source gas mixture having a silicon based gas for depositing the tungsten nitride to overlie a deposition substrate. A non-planar storage capacitor has a tungsten nitride capacitor electrode.

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MICRON TECHNOLOGY, INC.

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Doan, Trung	Boise, ID	16	335
Meikle, Scott	Boise, ID	40	1817

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Method of depositing tungsten nitride using a source gas comprising silicon

Number of patents in Portfolio can not be more than 2000

United States of America Patent

10004714

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US Family Size	Non-US Coverage
Patent Longevity Expired	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
May 04, 2004	US,6730954,B2 US6730954B2	GRANTED PATENT AS SECOND PUBLICATION
April 18, 2002	US,20020045322,A1 US20020045322A1	FIRST PUBLISHED PATENT APPLICATION

PATENT NO	6730954
SERIAL NO	10004714
DOCKET NO

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10004714

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