Thin film transistor and semiconductor device and method for forming the same
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United States of America Patent
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Nov 12, 2002
Issued Date -
N/A
app pub date -
Nov 22, 1999
filing date -
Mar 25, 1991
priority date (Note) -
Expired
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Abstract
A thin film transistor and a semiconductor device and a method for forming the same. A silicon thin film formed on an insulating substrate is heated at 550 to 800.degree. C. so that it has crystallinity, and a thin film transistor is formed using the crystalline silicon film thus obtained. Thermal contraction of the insulating substrate is set in a range of 30 to 500 ppm in the heating process, so that the thin film transistor has high mobility, low threshold voltage and high off-resistance. Thermal contraction of the insulating substrate may be also set 100 ppm or less in a heating process after a patterning treatment in a thin film transistor producing process.
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