Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures

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Jan 25, 2011
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Mar 27, 2008
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Sep 27, 2007
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Sep 27, 2006

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Abstract

Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.

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TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Cheng, Zhiyuan	Lincoln, US	40	2725
Sheen, Calvin	Derry, US	12	637

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Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures

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United States of America Patent

11862850

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PATENT NO	7875958
APP PUB NO	20080073641A1
SERIAL NO	11862850
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
January 25, 2011	US,7875958,B2 US7875958B2	GRANTED PATENT AS SECOND PUBLICATION
March 27, 2008	US,20080073641,A1 US20080073641A1	FIRST PUBLISHED PATENT APPLICATION

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11862850

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