Methods of filling trenches using high-density plasma deposition (HDP)
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United States of America Patent
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Jun 6, 2006
Grant Date -
Feb 17, 2005
app pub date -
Aug 13, 2004
filing date -
Aug 14, 2003
priority date (Note) -
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Abstract
Methods of filling trenches/gaps defined by circuit elements on an integrated circuit substrate are provided. The methods include forming a first high-density plasma layer on an integrated circuit substrate including at least one trench thereon using a first reaction gas. The first high-density plasma layer is etched using an etch gas including nitrogen fluoride gas (NF.sub.3). A second high-density plasma layer is formed on the etched first high-density plasma layer using a second reaction gas including nitrogen fluoride.
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