High-speed and low-voltage electro-optical modulator based on lithium niobate-silicon wafer

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United States of America

PATENT NO 11940707
SERIAL NO

17547124

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Abstract

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A high-speed and low-voltage electro-optical modulator based on a lithium niobate-silicon wafer. A silicon wafer is located above a lithium niobate wafer; a lithium niobate-silicon hybrid waveguide is formed by etching a silicon waveguide; and the power of light waves is differently distributed in the lithium niobate-silicon hybrid waveguide by changing the structure of the silicon waveguide. When higher power is distributed in the silicon waveguide, the high-speed and low-voltage electro-optical modulator is suitable for realizing a compact wave splitting function, a wave combining function and a thermo-optical modulation function; and when higher power is distributed in the lithium niobate waveguide, the high-speed and low-voltage electro-optical modulator is suitable for realizing a high-speed and low-voltage electro-optical modulation function. The present invention takes advantage of the lithium niobate and silicon material platforms respectively, and is suitable for high-speed and low-voltage electro-optical modulation.

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Patent Owner(s)

  • SHANGHAI JIAO TONG UNIVERSITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wang, Jing Shanghai, CN 1523 11458
Xu, Shaofu Shanghai, CN 6 11
Zou, Weiwen Shanghai, CN 15 30

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