Method of manufacturing a compound semiconductor by heating a layered structure including rare earth transition metal
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United States of America Patent
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May 17, 2005
Grant Date -
Oct 2, 2003
app pub date -
Mar 4, 2003
filing date -
Mar 28, 2002
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Abstract
A method of manufacturing a compound semiconductor includes the steps of forming a layered structure of dielectric layers including oxygen or sulfur, and an inter layer formed between the dielectric layers, including rare earth transition metal that is highly reactive to oxygen and sulfur, and heating the layered structure. As a result of the chemical reaction and diffusion of elements, one can change a heated portion of the layered structure to a semiconductor or an insulator, depending on the temperature to which the portion is heated.
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