TEM sample slicing process
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United States of America Patent
Stats
-
Feb 3, 2004
Grant Date -
Jun 20, 2002
app pub date -
Dec 4, 2001
filing date -
Dec 6, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The present invention adopts a TEM sample slicing process for observation of a specified point on a cross section of a wafer shaped sample, comprising a step of depositing a thick protection film on the sample surface at regions of the cross section to be observed, a step of hollowing out a large hole in front of the regions of the cross section to be observed, a step of forming hollowing out a hole behind the regions of the cross section to be observed and forming slicing process sections, and following on from that, executing slicing processing by setting irradiation regions at regions including the center of the slicing process section and irradiating a focused ion beam from above the sample surface, using angle of incidence characteristics of etching rate due to a focused ion beam.
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