Non-volatile memory device and fabricating method thereof
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United States of America Patent
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Mar 18, 2008
Grant Date -
Jun 15, 2006
app pub date -
Jan 27, 2006
filing date -
Mar 10, 2003
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Abstract
A non-volatile memory device comprises a gate line that includes a gate dielectric layer, a bottom gate pattern, an inter-gate dielectric and a top gate pattern, which are sequentially stacked. The width of the inter-gate dielectric is narrower than that of the bottom gate pattern.
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