MTJ read head with sidewall spacers

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United States of America Patent

PATENT NO 7241632
APP PUB NO 20060234445A1
SERIAL NO

11106320

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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Following CMP, a magnetic tunnel junction stack may protrude through the oxide that surrounds it, making it susceptible to possible shorting to its sidewalls. The present invention overcomes this problem by depositing silicon nitride spacers on these sidewalls prior to oxide deposition and CMP. So, even though the stack may protrude through the top surface of the oxide after CMP, the spacers serve to prevent possible later shorting to the stack.

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Patent Owner(s)

  • APPLIED SPINTRONICS, INC.;HEADWAY TECHNOLOGIES, INC.

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yang, Lin Milpitas, CA 950 7819

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