Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill

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United States of America Patent

PATENT NO 11848199
SERIAL NO

17286407

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Abstract

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A doped or undoped silicon carbide (SiCxOyNz) film can be deposited in one or more features of a substrate for gapfill. After a first thickness of the doped or undoped silicon carbide film is deposited in the one or more features, the doped or undoped silicon carbide film is exposed to a remote hydrogen plasma under conditions that cause a size of an opening near a top surface of each of the one or more features to increase, where the conditions can be controlled by controlling treatment time, treatment frequency, treatment power, and/or remote plasma gas composition. Operations of depositing additional thicknesses of silicon carbide film and performing a remote hydrogen plasma treatment are repeated to at least substantially fill the one or more features. Various time intervals between deposition and plasma treatment may be added to modulate gapfill performance.

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Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATION4650 CUSHING PARKWAY FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gong, Bo Sherwood, US 65 1737
Narkeviciute, Ieva Portland, US 7 18
Varadarajan, Bhadri N Beaverton, US 57 3749
Yuan, Guangbi Beaverton, US 16 376

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