Hydrogenated silicon carbide as a liner for self-aligning contact vias
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United States of America Patent
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Mar 26, 2002
Grant Date -
N/A
app pub date -
Aug 16, 2000
filing date -
Aug 16, 2000
priority date (Note) -
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Abstract
The present invention provides a method of fabricating a self-aligning contact opening comprising: (a) forming a dielectric layer over a semiconductor substrate and gate electrodes located on the semiconductor substrate, (b) forming a carbide liner over the dielectric layer, and (c) etching at least a portion the carbide liner to form a self-aligning contact opening between the gate electrodes.
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