Stress shield for microelectronic dice
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United States of America Patent
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May 27, 2003
Grant Date -
N/A
app pub date -
Mar 9, 2000
filing date -
Mar 9, 2000
priority date (Note) -
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status (Latency Note)
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Abstract
A stress shield made of a material having a coefficient of thermal expansion similar to that of the material used in the fabrication of a microelectronic die, including but not limited to silicon, molybdenum, and aluminum nitride. The stress shield abuts at least one corner and/or edge of the microelectronic die. When the stress shield is positioned to abut the microelectronic die comers and/or edges, the mechanical stresses on the microelectronic die are greatly reduced or substantially eliminated.
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