Methods of forming spin-on-glass insulating layers in semiconductor devices and associated semiconductor device
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United States of America Patent
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Sep 8, 2009
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app pub date -
Dec 10, 2004
filing date -
Dec 10, 2003
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Abstract
Methods of forming an insulating layer in a semiconductor device are provided in which a metal oxide layer is formed on a semiconductor structure that includes a plurality of gap regions thereon. A spin-on-glass layer is formed on the metal oxide layer, and then the semiconductor structure is heated to a temperature of at least about 400° C. The spin-on-glass layer may comprise a siloxane-based material, a silanol-based material or a silazane-based material.
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