Silicon carbide and other films and method of deposition
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United States of America Patent
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Aug 28, 2007
Grant Date -
May 19, 2005
app pub date -
Nov 18, 2003
filing date -
Nov 18, 2003
priority date (Note) -
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Abstract
A method of depositing a ceramic film, particularly a silicon carbide film, on a substrate is disclosed in which the residual stress, residual stress gradient, and resistivity are controlled. Also disclosed are substrates having a deposited film with these controlled properties and devices, particularly MEMS and NEMS devices, having substrates with films having these properties.
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