Plasma atomic layer deposition

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United States of America Patent

PATENT NO 10480078
APP PUB NO 20180363143A1
SERIAL NO

16116321

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Abstract

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Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma. Reduced residence time increases the quality of the deposited layer, such as reducing wet etch rates, increasing index of refraction and/or reducing impurities in the layer. For example, dielectric layers, particularly silicon nitride films, formed from such optimized plasma ALD processes have low levels of impurities remaining from the silicon precursor.

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Patent Owner(s)

  • ASM IP HOLDINGS B.V.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
de, Peuter Koen Eindhoven, NL 5 354
Kessels, Wilhelmus M M Tilburg, NL 5 12
Knoops, Harm C M Eindhoven, NL 4 12

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