Storage element and memory

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 11839163
APP PUB NO 20220238797A1
SERIAL NO

17717362

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Abstract

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A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

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Patent Owner(s)

Patent OwnerAddress
SONY CORPORATIONTOKYO 108-0075

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bessho, Kazuhiro Kanagawa, JP 163 1864
Higo, Yutaka Miyagi, JP 184 1901
Hosomi, Masanori Kanagawa, JP 189 1995
Kano, Hiroshi Kanagawa, JP 132 1879
Ohmori, Hiroyuki Kanawaga, JP 192 1857
Oishi, Yuki Kanagawa, JP 61 706
Yamamoto, Tetsuya Kanagawa, JP 579 12339
Yamane, Kazutaka Miyagi, JP 173 1526

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