Phase change memory devices with relaxed stress

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United States of America Patent

PATENT NO 8759810
APP PUB NO 20120273746A1
SERIAL NO

13497683

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Abstract

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A phase change memory device that utilizes a nanowire structure. Usage of the nanowire structure permits the phase change memory device to release its stress upon amorphization via the minimization of reset resistance and threshold resistance.

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Patent Owner(s)

  • THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Agarwal, Ritesh Philadelphia, US 10 234
Jung, Yeonwoong Philadelphia, US 2 6
Mitra, Mukut Wilmington, US 1 4

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